IRL640SPBF

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Package / Case : D2PAK
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 200 V
Continuous Drain Current : 17 A
Gate-Source Breakdown Voltage : +/- 10 V
Resistance Drain-Source RDS (on) : 0.18 Ohms


Description

The IRL640SPbF is deisgned as the third generational HEXFET from international rectifier which provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The IRL640SPbF has eight features. (1)Surface mount. (2)Available in tape & reel. (3)Dynamic dv/dt rating. (4)Repetitive avalanche rated. (5)Logic level gate drive. (6)Rds(on) specified at Vgs=4V & 5V. (7)Fast switching. (8)Lead free. That are all the main features.

Some absolute maximum ratings of IRL640SPbF have been concluded into several points as follow. (1)Its continuous drain current Vgs=5V would be max 17A at 25°C and would be max 11A at 100°C. (2)Its pulsed drain current would be 68A. (3)Its power dissipation would be 125W. (4)Its power dissipation (PCB mount) would be 3.1W. (5)Its linear derating factor would be 1.0W/°C. (6)Its gate to source voltage would be +/-10V. (7)Its single pulse avalanche energy would be 580mJ. (8)Its repetitive avalanche energy would be 13mJ. (9)Its peak diode recovery dv/dt would be 5.0V/ns. (10)Its junction and storage temperature range would be from -55°C to +150°C. (11)Its soldering temperature for 10 seconds would be 300°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of IRL640SPbF are concluded as follow. (1)Its drain to source breakdown voltage would be min 200V. (2)Its breakdown voltage temperature coefficient would be typ 0.27V/°C. (3)Its static drain to source on resistance would be max 0.18 ohms at Vgs=5.0V and Id=10A. (4)Its gate threshold voltage would be min 1.0V and max 2.0V. (5)Its forward transconductance would be min 16S. (6)Its drain to source leakage current would be max 25uA at Vds=200V and Vgs=0V and would be max 250uA at Vds=160V and Vgs=0V and Tj=125°C. (7)Its gate to source forward leakage would be max 100nA at Vgs=10V. (8)Its gate to source reverse leakage would be max -100nA at Vgs=-10V. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!