IRL630S

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Package / Case : D2PAK
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 200 V
Continuous Drain Current : 9 A
Gate-Source Breakdown Voltage : +/- 10 V
Resistance Drain-Source RDS (on) : 0.4 Ohms


Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	9.0	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	5.7
IDM	Pulsed Drain Current	36
PD @Tc = 25°C	Power Dissipation	74
PD @TC = 25°C	Power Dissipation (PCB Mount)**	3.1	W
	Linear Derating Factor	0.59	W/°C
	Linear Derating Factor (PCB Mount)**	0.025
VGS	Gate-to-Source Voltage	±10	V
EAS	Single Pulse Avalanche Energy	250	mJ
IAR	Avalanche Current	9.0	A
EAR	Repetitive Avalanche Energy	7.4	mJ
dv/dt	Peak Diode Recovery dv/dt	5.0	V/ns
TJ, TSTG	Junction and Storage Temperature Range	-55 to + 150
	Soldering Temperature, for 10 seconds	300 (1.6mm from case)

Description

Third Generation HEXFETs from International Rectifier IRL630S  provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The SMD-220 IRL630S  is a surface mount power package capable of accommodating die sizes up to HEX-4. The IRL630S  provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The SMD-220 IRL630S  is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.