IRL630PBF

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 200 V
Continuous Drain Current : 9 A
Gate-Source Breakdown Voltage : +/- 10 V
Resistance Drain-Source RDS (on) : 400 mOhms


Description

The IRL630PbF is designed as the third generation HEXFET from international rectifier which provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

The IRL630PbF  has eight features. (1)Dynamic dv/dt rating. (2)Repetitive avalanche rated. (3)Logic level gate drive. (4)Rds(on) specified at Vgs=4V & 5V. (5)150°C operating temperature. (6)Fast switching. (7)Ease of paralleling. (8)It would be lead free. That are all the main features.

Some absolute maximum ratings of IRL630PbF  have been concluded into several points as follow. (1)Its continuous drain current at Vgs=5V would be 9.0A at 25°C and would be 5.7A at 100°C. (2)Its pulsed drain current would be 36A. (3)Its power dissipation would be 74W. (4)Its linear derating factor would be 0.59W/°C. (5)Its gate to source voltage would be 10V. (6)Its single pulse avalanche energy would be 250mJ. (7)Its avalanche current would be 9.0A. (8)Its repetitive analanche energy would be 7.4mJ. (9)Its peak diode recovery dv/dt would be 5.0V/ns. (10)Its operating junction ans storage temperature range would be from -55°C to +150°C. (11)Its soldering temperature for 10 seconds would be 300°C 1.6mm from case. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of IRL630PbF  are concluded as follow. (1)Its drain to source breakdown voltage would be min 200V. (2)Its breakdown voltage temperature coefficient would be typ 0.27V°C. (3)Its static drain to source on-resistance would be max 0.4 ohms at Vgs=5.0V and Id=5.4A and would be max 0.50 ohms at Vgs=4.0V and Id=4.5A. (4)Its forward transconductance would be min 4.8S. (5)Its gate threshold voltage would be min 1.0V and max 2.0V. (6)Its gate to source leakage forward leakage would be max 100nA. (7)Its gate to source reverse leakage would be max -100nA. And so on.If you have any question or suggestion or want to know more information please contact us for details. Thank you!