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IRL630A

MOSFET 200V N-Channel a-FET Logic Level

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SeekIC No. : 00160962 Detail

IRL630A: MOSFET 200V N-Channel a-FET Logic Level

IRL630A Data Sheet

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Part Number:
IRL630A
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 9 A
Resistance Drain-Source RDS (on) : 0.4 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 200 V
Continuous Drain Current : 9 A
Resistance Drain-Source RDS (on) : 0.4 Ohms


Features:

Logic-Level Gate Drive
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current: 10A (Max.) @ VDS = 200V
Lower RDS(ON): 0.335W (Typ.)


Specifications

Symbol
 Characteristic
Value
Units
VDSS
 Drain-to-Source Voltage
200
V
ID
 Continuous Drain Current (TC=25°C)
9
A
Continuous Drain Current (TC=100°C)
5.7
IDM
 Drain Current-Pulsed (1)
32
A
VGS
 Gate-to-Source Voltage
±20
V
EAS
 Single Pulsed Avalanche Energy (2)
54
mJ
IAR
 Avalanche Current (1)
9
A
EAR
 Repetitive Avalanche Energy (1)
6.9
mJ
dv/dt
 Peak Diode Recovery dv/dt (2)
5
V/ns
PD
 Total Power Dissipation (TC=25°C)
Linear Derating Factor
69
0.55
W
W/°C
TJ , TSTG
 Operating Junction and
Storage Temperature Range
- 55 to +150
°C
TL
 Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
300



Parameters:

Technical/Catalog InformationIRL630A
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C9A
Rds On (Max) @ Id, Vgs400 mOhm @ 4.5A, 5V
Input Capacitance (Ciss) @ Vds 755pF @ 25V
Power - Max69W
PackagingTube
Gate Charge (Qg) @ Vgs27nC @ 5V
Package / CaseTO-220
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRL630A
IRL630A



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