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IRL404

Specifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @10V 160 ID @ TC = 100°C Continuous Drain Current, VGS @10V 110 A IDM Pulsed Drain Current 640 PD @TC = 25°C Power Dissipation 200 W Linear Derating Factor ...

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IRL404: Specifications Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @10V 160 ID @ TC = 100°C Continuous Drain Current, VGS @10V 110 A IDM Pulsed Dr...

IRL404 Data Sheet

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Part Number:
IRL404
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Specifications

Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @10V
160
ID @ TC = 100°C Continuous Drain Current, VGS @10V
110
A
IDM Pulsed Drain Current
640
PD @TC = 25°C Power Dissipation
200
W
Linear Derating Factor
1.3
W/°C
VGS Gate-to-Source Voltage
±20
V
EAS Single Pulse Avalanche Energy
620
mJ
IAR Avalanche Current
95
A
EAR Repetitive Avalanche Energy
20
mJ
dv/dt Peak Diode Recovery dv/dt
5.0
V/ns
TJ
TSTG		 Operating Junction and
Storage Temperature Range
-55 to + 175
°C
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw.

10 lbf•in (1.1N•m)



Description

Seventh Generation HEXFET® power MOSFETs from International Rectifier IRL404 utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device IRL404 design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package of IRL404 is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.




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