Features: • 7-pin SIP type full molded package, optimum IC for low-height SMPS.• Oscillator is provided on the monolithic control with adopting On-Chip Trimming Technology• Small temperature characteristics variation by adopting a comparator to compensate for temperature on the c...
IRIS-X6757: Features: • 7-pin SIP type full molded package, optimum IC for low-height SMPS.• Oscillator is provided on the monolithic control with adopting On-Chip Trimming Technology• Small t...
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• 7-pin SIP type full molded package, optimum IC for low-height SMPS.
• Oscillator is provided on the monolithic control with adopting On-Chip Trimming Technology
• Small temperature characteristics variation by adopting a comparator to compensate for temperature on the control part.
• Low start-up circuit current (100uA max)
•Avalanche energy guaranteed MOSFET with high VDSS
- The built-in power MOSFET simplifies the surge absorption circuit since the MOSFET guarantees the avalanche energy.
- No VDSS de-rating is required.
• Built-in constant voltage drive circuit
• Built-in step drive circuit
• Built-in low frequency PWM mode ( 22 kHz)
• UVLO Burst Standby
• Two operational modes by auto switching functions according to load
- For middle~heavy load operation : QR mode
- For light~middle load operation : 1 Bottom Skip mode
• Various kinds of protection functions
- Pulse-by-Pulse Overcurrent Protection (OCP)
- Overvoltage Protection with Latch mode (OVP)
- Overload Protection with Latch mode (OLP)
- The maximum limit of on-time
Symbol | Definition | Terminals | Max.Ratings | Units | Note |
IDpeak | Drain Current *1 | 1-3 | 18 | A | Single Pulse |
IDMAX | Maximum switching current *5 | 1-3 | 18 | A | V2-3=0.78V Ta=-20~+125 |
EAS | Single pulse avalanche energy *2 | 1-3 | 326 | mJ | VDD=99V, L=20mH ILpeak=2.8A Single Pulse |
Vin | Input voltage for control part | 4-3 | 35 | V | |
Vth | O.C.P/F.B Pin voltage | 5-3 | -0.5 ~ 6.0 | V | |
PD1 | Power dissipation for MOSFET *3 | 1-3 | 44 | W | With infintite heatsink |
2.8 | W | Without heatsink | |||
PD2 | Power dissipation for control part | 4-3 | 0.8 | W | Specified by Vin*Iin |
(Control IC) *4 | |||||
TF | Internal frame temperature | - | -20 ~ +125 | Refer to recommended | |
in operation | operating temperature | ||||
Top | Operating ambient temperature | - | -20 ~ +125 | ||
Tstg | Storage temperature | - | -40 ~ +125 | ||
Tch | Channel temperature | - | 150 |
*1 Refer to MOS FET A.S.O. curve
*2 Maximum switching current
- The maximum switching current is the Drain current determined by the drive voltage of the IC and threshold voltage (Vth) of the MOS FET.
*3 Refer to MOS FET Tch-EAS curve
*4 Refer to MOS FET Ta-PD1 curve
IRIS-X6757 is a hybrid IC consisting of a power MOSFET and a controller IC, designed for Quasi-Resonant (including low frequency PWM) fly-back converter type SMPS (Switching Mode Power Supply) applications. This IRIS-X6757 realizes high efficiency, low noise, downsizing and standardizing of a power supply system reducing external component count and simplifying the circuit design.