IRIS-X6757

Features: • 7-pin SIP type full molded package, optimum IC for low-height SMPS.• Oscillator is provided on the monolithic control with adopting On-Chip Trimming Technology• Small temperature characteristics variation by adopting a comparator to compensate for temperature on the c...

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SeekIC No. : 004378190 Detail

IRIS-X6757: Features: • 7-pin SIP type full molded package, optimum IC for low-height SMPS.• Oscillator is provided on the monolithic control with adopting On-Chip Trimming Technology• Small t...

floor Price/Ceiling Price

Part Number:
IRIS-X6757
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Features:

• 7-pin SIP type full molded package, optimum IC for low-height SMPS.
• Oscillator is provided on the monolithic control with adopting On-Chip Trimming Technology
• Small temperature characteristics variation by adopting a comparator to compensate for temperature on the control part.
• Low start-up circuit current (100uA max)
•Avalanche energy guaranteed MOSFET with high VDSS
  - The built-in power MOSFET simplifies the surge absorption circuit since the MOSFET guarantees the avalanche energy.
  - No VDSS de-rating is required.
• Built-in constant voltage drive circuit
• Built-in step drive circuit
• Built-in low frequency PWM mode ( 22 kHz)
• UVLO Burst Standby
• Two operational modes by auto switching functions according to load
  -  For middle~heavy load operation : QR mode
  - For light~middle load operation : 1 Bottom Skip mode
• Various kinds of protection functions
  - Pulse-by-Pulse Overcurrent Protection (OCP)
  - Overvoltage Protection with Latch mode (OVP)
  - Overload Protection with Latch mode (OLP)
  - The maximum limit of on-time




Pinout

  Connection Diagram


Specifications

Symbol Definition Terminals Max.Ratings Units Note
IDpeak Drain Current *1 1-3 18 A Single Pulse
IDMAX Maximum switching current *5 1-3 18 A V2-3=0.78V Ta=-20~+125
EAS Single pulse avalanche energy *2 1-3 326 mJ VDD=99V, L=20mH ILpeak=2.8A Single Pulse
Vin Input voltage for control part 4-3 35 V  
Vth O.C.P/F.B Pin voltage 5-3 -0.5 ~ 6.0 V  
PD1 Power dissipation for MOSFET *3 1-3 44 W With infintite heatsink
2.8 W Without heatsink
PD2 Power dissipation for control part 4-3 0.8 W Specified by Vin*Iin
(Control IC) *4
TF Internal frame temperature - -20 ~ +125 Refer to recommended
in operation operating temperature
Top Operating ambient temperature - -20 ~ +125  
Tstg Storage temperature - -40 ~ +125  
Tch Channel temperature - 150  

*1 Refer to MOS FET A.S.O. curve
*2 Maximum switching current
  - The maximum switching current is the Drain current determined by the drive voltage of the IC and threshold voltage (Vth) of the MOS FET.
*3 Refer to MOS FET Tch-EAS curve
*4 Refer to MOS FET Ta-PD1 curve




Description

IRIS-X6757 is a hybrid IC consisting of a power MOSFET and a controller IC, designed for Quasi-Resonant (including low frequency PWM) fly-back converter type SMPS (Switching Mode Power Supply) applications. This IRIS-X6757 realizes high efficiency, low noise, downsizing and standardizing of a power supply system reducing external component count and simplifying the circuit design.




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