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IRIS-W6756

Features: • 6-pin SIP type full molded package, optimum IC for low-height SMPS, distance between high and low voltage pins is 1.8 mm with pin elimination.• Oscillator is provided on the monolithic control with adopting On-Chip Trimming Technology• Small temperature characteristic...

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SeekIC No. : 004378189 Detail

IRIS-W6756: Features: • 6-pin SIP type full molded package, optimum IC for low-height SMPS, distance between high and low voltage pins is 1.8 mm with pin elimination.• Oscillator is provided on the ...

IRIS-W6756 Data Sheet

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Part Number:
IRIS-W6756
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/31

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Product Details

Description



Features:

• 6-pin SIP type full molded package, optimum IC for low-height SMPS,
   distance between high and low voltage pins is 1.8 mm with pin elimination.
• Oscillator is provided on the monolithic control with adopting On-Chip Trimming Technology
• Small temperature characteristics variation by adopting a comparator to
   compensate for temperature on the control part.
• Low start-up circuit current (100uA max)
•Avalanche energy guaranteed MOSFET with high VDSS
  - The built-in power MOSFET simplifies the surge absorption
    circuit since the MOSFET guarantees the avalanche energy.
  - No VDSS de-rating is required.
• Built-in constant voltage drive circuit
• Built-in step drive circuit
• Built-in low frequency PWM mode (22 kHz)
• UVLO Burst Standby
• Two operational modes by auto switching functions according to load
   - For middle~heavy load operation : QR mode
   - For light~middle load operation : 1 Bottom Skip mode
• Various kinds of protection functions
   - Pulse-by-Pulse Overcurrent Protection (OCP)
   - Overvoltage Protection with Latch mode (OVP)
   - Overload Protection with Latch mode (OLP)
   - The maximum limit of on-time


Specifications

Symbol Definition Terminal
s		 Max.
Ratings		 Units Note
IDpeak Drain Current * 1 1 - 3 15 A Single Pulse
IDMAX Maximum switching current *2 1 - 3 15 A Ta=-20~+125
EAS Single pulse avalanche energy *3 1 - 3 400 mJ Single Pulse
VDD=99V,L=20mH
ILpeak =6.05A
Vcc Input voltage for control part 4 - 3 35 V  
VSSOLP SS/OLP pin voltage 5 - 3 -0.5 ~ 6.0 V  
IFB FB pin inflow current 6- 3 10 mA  
VFB FB pin voltage 6- 3 -0.5 ~ 9.0 V within the limits of IFB
VOCPBD O.C.P/F.B pin voltage 7- 3 -1.5 ~ 5.0 V  
PD1 Power dissipation of MOSFET *4 1 - 3 29 W With infinite heatsink
1.3 Without heatsink
PD2 Power dissipation for control part
(MIC)		 4 - 3 0.8 W Specified by Vcc x
Icc
TF Internal frame temperature in operation - -20 ~ +115   Refer to recommended
operating temperature
Top Operating ambient temperature - -20 ~ +115    
Tstg Storage temperature - -40 ~ +125    
Tch Channel temperature - 150  
*1 Refer to MOS FET A.S.O. curve
*2 Maximum switching current
    The maximum switching current is the Drain 
    current determined by the drive voltage of the IC and
    threshold voltage (Vth) of the MOS FET.
*3 Refer to MOS FET Tch-EAS curve
*4 Refer to MOS FET Ta-PD1 curve


Description

IRIS-W6756 is a hybrid IC consisting of a power MOSFET and a controller IC, designed for Quasi-Resonant (including low frequency PWM) fly-back converter type SMPS (Switching Mode Power Supply) applications. This IRIS-W6756 realizes high efficiency, low noise, downsizing and standardizing of a power supply system reducing external component count and simplifying the circuit design.




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