IRIS-W6753

Features: ·6-pin SIP type full molded package, optimum IC for low-height SMPS, withdistance between high and low voltage pin 1.8 mm with pin elimination.·Oscillator is provided on the monolithic control with adopting On-Chip Trimming Technology·Small temperature characteristics variation by adopti...

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SeekIC No. : 004378187 Detail

IRIS-W6753: Features: ·6-pin SIP type full molded package, optimum IC for low-height SMPS, withdistance between high and low voltage pin 1.8 mm with pin elimination.·Oscillator is provided on the monolithic con...

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Part Number:
IRIS-W6753
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/2/15

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Product Details

Description



Features:

·6-pin SIP type full molded package, optimum IC for low-height SMPS, with distance between high and low voltage pin 1.8 mm with pin elimination.
·Oscillator is provided on the monolithic control with adopting On-Chip Trimming Technology
·Small temperature characteristics variation by adopting a comparator to compensate for temperature on the control part.
·Low start-up circuit current (100uA max)
·Avalanche energy guaranteed MOSFET with high VDSS
-The built-in power MOSFET simplifies the surge  absorption circuit since the MOSFET guarantees  the avalanche energy.
-No VDSS de-rating is required.
·Built-in constant voltage drive circuit
·Built-in step drive circuit
·Built-in low frequency PWM mode (22 kHz)
·UVLO Burst Standby
·Two operational modes by auto switching functions according to load
-For middle~heavy load operation : QR mode
-For light~middle load operation : 1 Bottom Skip mode
·Various kinds of protection functions
-Pulse-by-Pulse OvercurrentProtection (OCP)
-OvervoltageProtection with Latch mode (OVP)
-Overload Protection with Latch mode (OLP)
-The maximum limit of on-time



Specifications

Symbol Definition
Terminal.
Max,Ratings
Units
Note
IDpeak
IDMAX
Drain Current * 1
Maximum switching current *2
1 - 3
1 - 3
11.2
11.2
A
A
Single Pulse
Ta=-20~+125
EAS
Single pulse avalanche energy *3
1 - 3
145
mJ
Single Pulse
VDD =99V,L=20mH
IL=3.6A
Vcc
VSSOLP
IFB
Input voltage for control part
SS/OLP pin voltage
FB pin inflow current
4 - 3
5 - 3
6- 3
35
-0.5 ~ 6.0
10
V
V
mA
 
VFB
VOCPBD
FB pin voltage
O.C.P/F.B pin voltage
6- 3
7- 3
-0.5 ~ 9.0
-1.5 ~ 5.0
V
V
within the limits of IFB
PD1
Power dissipation of MOSFET *4
1 - 3
26.0
W
With infinite heatsink
1.3
Without heatsink
PD2

TF

Top

Tstg

Tch
Power dissipation for control part (MIC)

Internal frame temperature in operation

Operating ambient temperature

Storage temperature

Channel temperature
4 - 3

-

-

-

-
0.8

20 ~ +115

20 ~ +115

40 ~ +125

150
W









Specified by Vcc x Icc

Refer to recommended
operating temperature







*1 Refer to MOS FET A.S.O. curve
*2 Maximum switching current The maximum switching current is the Drain current determined bythe drive voltage of the IC and threshold voltage (Vth) of the MOS FET.
*3 Refer to MOS FET Tch-EAS curve
*4 Refer to MOS FET Ta-PD1 curve



Description

IRIS-W6753 is a hybrid IC consisting of a power MOSFET and a controller IC, designed for Quasi-Resonant (including low frequency PWM) fly-back converter type SMPS (Switching Mode Power Supply) applications. This IRIS-W6753 realizes high efficiency, low noise, downsizing and standardizing of a power supply system reducing external component count and simplifying the circuit design.




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