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IRIS-G6651

Features: • Oscillator is provided on the monolithic control with adopting On-Chip- Trimming technology.• Small temperature characteristics variation by adopting a comparator to compensate for temperature on the control part.• Low start-up circuit current (100uA max)• Built...

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SeekIC No. : 004378182 Detail

IRIS-G6651: Features: • Oscillator is provided on the monolithic control with adopting On-Chip- Trimming technology.• Small temperature characteristics variation by adopting a comparator to compensa...

IRIS-G6651 Data Sheet

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Part Number:
IRIS-G6651
Supply Ability:
5000

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  • 1~5000
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Product Details

Description



Features:

• Oscillator is provided on the monolithic control with adopting On-Chip- Trimming technology.
• Small temperature characteristics variation by adopting a comparator to compensate for temperature on the control part.
• Low start-up circuit current (100uA max)
• Built-in Active Low-Pass Filter for stabilizing the operation in case of light load
• Avalanche energy guaranteed MOSFET with high VDSS
• The built-in power MOSFET simplifies the surge absorption circuit since the MOSFET guarantees the avalanche energy.
• No VDSS de-rating is required.
• Built-in constant voltage drive circuit
• Built-in soft drive circuit
• Built-in low frequency PRC mode (20kHz)
• Various kinds of protection functions
• Pulse-by-pulse Overcurrent Protection (OCP)
• Overvoltage Protection with latch mode (OVP)
• Thermal Shutdown with latch mode (TSD)




Pinout

Connection Diagram


Specifications

Symbol Definition Terminals Max. Ratings Units Note
IDpeak Drain Current *1 1-2 2.7 A Single Pulse
IDMAX Maximum switching current *5 1-2 2.7 A V2-3=0.78V Ta=-20~+125
EAS Single pulse avalanche energy *2 1-2 92 mJ VDD=99V, L=20mH ILpeak=2.8A Single Pulse
Vin Input voltage for control part 4-3 35 V  
Vth O.C.P/F.B Pin voltage 5-3 6 V  
PD1 Power dissipation for MOSFET *3 1-2 24 W With infintite heatsink
1.5 W Without heatsink
PD2 Power dissipation for control part 4-3 0.8 W Specified by Vin*Iin
(Control IC) *4
TF Internal frame temperature - -20 ~ +125 Refer to recommended
in operation operating temperature
Top Operating ambient temperature - -20 ~ +125  
Tstg Storage temperature - -40 ~ +125  
Tch Channel temperature - 150  

*1 Refer to MOS FET A.S.O curve
*2 MOS FET Tch-EAS curve
*3 Refer to MOS FET Ta-PD1 curve
*4 Refer to TF-PD2 curve for Control IC (See page 5)
*5 Maximum switching current.




Description

IRIS-G6651 is a hybrid IC consists from power MOSFET and a controller IC, designed for Quasi-Resonant (including low frequency PRC) fly-back converter type SMPS (Switching Mode Power Supply) applications.

This IRIS-G6651 realizes high efficiency, low noise, downsizing and standardizing of a power supply system reducing external components count and simplifying the circuit designs.

(Note). PRC is abbreviation of "Pulse Ratio Control" (On-width control with fixed OFF-time). Typical Connection Diagram




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