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IRIS-G6624

Features: • Oscillator is provided on the monolithic control with adopting On-Chip- Trimming technology.• Small temperature characteristics variation by adopting a comparator to compensate for temperature on the control part.• Low start-up circuit current (100uA max)• Buil...

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SeekIC No. : 004378181 Detail

IRIS-G6624: Features: • Oscillator is provided on the monolithic control with adopting On-Chip- Trimming technology.• Small temperature characteristics variation by adopting a comparator to compensa...

IRIS-G6624 Data Sheet

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Part Number:
IRIS-G6624
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Oscillator is provided on the monolithic control with adopting On-Chip- Trimming technology.
• Small temperature characteristics variation by adopting a comparator to compensate for
   temperature on the control part.
• Low start-up circuit current (100uA max)
• Built-in Active Low-Pass Filter for stabilizing the operation in case of light load
• Avalanche energy guaranteed MOSFET with high VDSS
• The built-in power MOSFET simplifies the surge absorption circuit since the MOSFET
   guarantees the avalanche energy.
• No VDSS de-rating is required.
• Built-in constant voltage drive circuit
• Built-in soft drive circuit
• Built-in low frequency PRC mode (20kHz)
• Various kinds of protection functions
• Pulse-by-pulse Overcurrent Protection (OCP)
• Overvoltage Protection with latch mode (OVP)
• Thermal Shutdown with latch mode (TSD)


Specifications

Symbol Definition Terminals Max. Ratings Units Note
IDpeak Drain Current *1 1-2 14.4 A Single Pulse
IDMAX Maximum switching current *5 1-2 14.4 A V2-3=0.78V
Ta=-20~+125
EAS Single pulse avalanche energy *2 1-2 67 mJ Single Pulse
VDD=99V, L=20mH
IL peak=2.6A
Vin Input voltage for control part 4-3 35 V  
Vth O.C.P/F.B Pin voltage 5-3 6 V  
PD1 Power dissipation for MOSFET *3 1-2 26 W With infintite heatsink
1.5 W Without heatsink
PD2 Power dissipation for control part 4-3 0.8 W Specified by
Vin*Iin
(Control IC) *4
TF Internal frame temperature -  -20 ~ +125 Refer to recommended
in operation operating temperature
Top Operating ambient temperature - -20 ~ +125  
Tstg Storage temperature - -40 ~ +125  
Tch Channel temperature - 150  

*1 Refer to MOS FET A.S.O curve
*2 MOS FET Tch-EAS curve
*3 Refer to MOS FET Ta-PD1 curve
*4 Refer to TF-PD2 curve for Control IC (See page 5)
*5 Maximum switching current.

The maximum switching current is the Drain current determined by the drive voltage of the IC and threshold voltage (Vth) of MOS FET. Therefore, in the event that voltage drop occurs between Pin 2 and Pin 3 due to patterning, the maximum switching current decreases as shown by V2-3 in Fig.1 Accordingly please use this device within the decrease value, referring to the derating curve of the maximum switching current.




Description

IRIS-G6624 is a hybrid IC consists from power MOSFET and a controller IC, designed for Quasi-Resonant (including low frequency PRC) fly-back converter type SMPS (Switching Mode Power Supply) applications. This IRIS-G6624 realizes high efficiency, low noise, downsizing and standardizing of a power supply system reducing external components count and simplifying the circuit designs.

(Note). PRC is abbreviation of "Pulse Ratio Control" (On-width control with fixed OFF-time).




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