IRIS-G5653

• Oscillator is provided on the monolithic control with adopting On-Chip-b Trimming technology.
• Small temperature characteristics variation by adopting a comparator to compensate for temperature on the control part.
• Low start-up circuit current (100uA max)
• Built-in Active Low-Pass Filter for stabilizing the operation in case of light load
• Avalanche energy guaranteed MOSFET with high VDSS
• The built-in power MOSFET simplifies the surge absorption circuit since the MOSFET guarantees the avalanche energy.
• No VDSS de-rating is required.
• Built-in constant voltage drive circuit
• Built-in step drive circuit
• Built-in low frequency PRC mode (20kHz)
• Various kinds of protection functions
• Pulse-by-pulse Overcurrent Protection (OCP)
• Overvoltage Protection with latch mode (OVP)
• Thermal Shutdown with latch mode (TSD)

*1 Refer to MOS FET A.S.O curve
*2 MOS FET Tch-EAS curve
*3 Refer to MOS FET Ta-PD1 curve
*4 Refer to TF-PD2 curve for Control IC (See page 5)
*5 Maximum switching current.

IRIS-G5653A is a hybrid IC consists from power MOSFET and a controller IC, designed for Indirect feed-back Quasi- Resonant (including low frequency PRC) fly-back converter type SMPS (Switching Mode Power Supply) applications.

This IRIS-G5653A realizes high efficiency, low noise, downsizing and standardizing of a power supply system reducing external components count and simplifying the circuit designs.