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IRIS-F6456S

Features: • Oscillator is provided on the monolithic control with adopting On-Chip- Trimming technology.• Small temperature characteristics variation by adopting a comparator to compensate for temperature on the control part.• Low start-up circuit current (100uA max)• Built...

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SeekIC No. : 004378176 Detail

IRIS-F6456S: Features: • Oscillator is provided on the monolithic control with adopting On-Chip- Trimming technology.• Small temperature characteristics variation by adopting a comparator to compensa...

IRIS-F6456S Data Sheet

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Part Number:
IRIS-F6456S
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Oscillator is provided on the monolithic control with adopting On-Chip- Trimming technology.
• Small temperature characteristics variation by adopting a comparator to compensate for temperature on the control part.
• Low start-up circuit current (100uA max)
• Built-in Active Low-Pass Filter for stabilizing the operation in case of light load
• Avalanche energy guaranteed MOSFET with high VDSS
• The built-in power MOSFET simplifies the surge absorption circuit since the MOSFET guarantees the avalanche energy.
• No VDSS de-rating is required.
• Built-in constant voltage drive circuit
• Built-in soft drive circuit
• Built-in low frequency PRC mode (20kHz)
• Various kinds of protection functions
• Pulse-by-pulse Overcurrent Protection (OCP)
• Overvoltage Protection with latch mode (OVP)
• Thermal Shutdown with latch mode (TSD)


Pinout

Connection Diagram


Specifications

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage arameters are absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Symbol Definition
Terminals
Max. Ratings
Units
Note
IDpeak Drain Current *1
3-2
16
A
Single Pulse
IDMAX Maximum switching current *5
3-2
16
A
V2-5=0.78V
Ta=-20~+125
EAS Single pulse EAS avalanche energy *2
3-2
521
mJ
Single Pulse
IL peak=6.4A
Vin Input voltage for control part
4-5
35
V
Vth O.C.P/F.B Pin voltage
1-5
6
V
PD1 Power dissipation for MOSFET *3
3-2
58
W
With infintite heatsink
2.8
W
Without heatsink
PD2 Power dissipation for control part
4-5
0.49
W
Specified by
Vin*Iin
(Control IC) *4
TF Internal frame temperature
-
-20 ~ +125
Refer to recommended
in operation
operating temperature
Top Operating ambient temperature
-
-20 ~ +125
Tstg Storage temperature
-
-40 ~ +125
Tch Channel temperature
-
150
*1 Refer to MOS FET A.S.O curve
*2 MOS FET Tch-EAS curve
*3 Refer to MOS FET Ta-PD1 curve
*4 Refer to TF-PD2 curve for Control IC (See page 5)
*5 Maximum switching current


Description

IRIS-F6456S is a hybrid IC consists from power MOSFET and a controller IC, designed for Quasi-Resonant (including low frequency PRC) fly-back converter type SMPS (Switching Mode Power Supply) applications. This IRIS-F6456S realizes high efficiency, low noise, downsizing and standardizing of a power supply system reducing external components count and simplifying the circuit designs. (Note). PRC is abbreviation of "Pulse Ratio Control" (On-width control with fixed OFF-time)




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