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IRIS-F6454R

Features: • Oscillator is provided on the monolithic control with adopting On-Chip- Trimming technology.• Small temperature characteristics variation by adopting a comparator to compensate for temperature on the control part.• Low start-up circuit current (100uA max)• Built...

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SeekIC No. : 004378175 Detail

IRIS-F6454R: Features: • Oscillator is provided on the monolithic control with adopting On-Chip- Trimming technology.• Small temperature characteristics variation by adopting a comparator to compensa...

IRIS-F6454R Data Sheet

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Part Number:
IRIS-F6454R
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Oscillator is provided on the monolithic control with adopting On-Chip- Trimming technology.
• Small temperature characteristics variation by adopting a comparator to compensate for temperature on the control part.
• Low start-up circuit current (100uA max)
• Built-in Active Low-Pass Filter for stabilizing the operation in case of light load
• Avalanche energy guaranteed MOSFET with high VDSS
• The built-in power MOSFET simplifies the surge absorption circuit
since the MOSFET guarantees the avalanche energy.
• No VDSS de-rating is required.
• Built-in constant voltage drive circuit
• Built-in soft drive circuit
• Built-in low frequency PRC mode (20kHz)
• Various kinds of protection functions
• Pulse-by-pulse Overcurrent Protection (OCP)
• Overvoltage Protection with latch mode (OVP)
• Thermal Shutdown with latch mode (TSD)


Specifications

Symbol Definition Terminals Max. Ratings Units Note
IDpeak Drain Current *1 3-2 14 A Single Pulse
IDMAX Maximum switching current *5 3-2 9.7 A V2-5=0.78V
Ta=-20~+125
EAS Single pulse avalanche energy *2 3-2 399 mJ Single Pulse
IL peak=4.7A
Vin Input voltage for control part 4-5 35 V
Vin O.C.P/F.B Pin voltage 1-5 6 V
PD1 Power dissipation for MOSFET *3 3-2 55 W With infintite heatsink
2.8 W Without heatsink
PD2 Power dissipation for control part 4-5 0.49 W Specified by
Vin*Iin
(Control IC) *4
TF Internal frame temperature - -20 ~ +125 Refer to recommended
in operation operating temperature
Top Operating ambient temperature - -20 ~ +125
Tstg Storage temperature - -40 ~ +125
Tch Channel temperature - 150
*1 Refer to MOS FET A.S.O curve
*2 MOS FET Tch-EAS curve
*3 Refer to MOS FET Ta-PD1 curve
*4 Refer to TF-PD2 curve for Control IC (See page 5)
*5 Maximum switching current.


Description

IRIS-F6454R is a hybrid IC consists from power MOSFET and a controller IC, designed for Quasi-Resonant (including low frequency PRC) fly-back converter type SMPS (Switching Mode Power Supply) applications. This IRIS-F6454R realizes high efficiency, low noise, downsizing and standardizing of a power supply system reducing external components count and simplifying the circuit designs. (Note). PRC is abbreviation of "Pulse Ratio Control" (On-width control with fixed OFF-time).




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