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IRIS-A6359

Features: • Oscillator is provided on the monolithic control IC with adopting On-Chip- Trimming technology.• Small temperature characteristics variation by adopting a comparator to compensate for temperature on the control part.• Low start-up circuit current (50uA max)• Bui...

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SeekIC No. : 004378172 Detail

IRIS-A6359: Features: • Oscillator is provided on the monolithic control IC with adopting On-Chip- Trimming technology.• Small temperature characteristics variation by adopting a comparator to compe...

IRIS-A6359 Data Sheet

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Part Number:
IRIS-A6359
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Oscillator is provided on the monolithic control IC with adopting On-Chip- Trimming technology.
• Small temperature characteristics variation by adopting a comparator to compensate for temperature on the control part.
• Low start-up circuit current (50uA max)
• Built-in Active Low-Pass Filter for stabilizing the operation in case of light load
• Avalanche energy guaranteed MOSFET with high VDSS
• The built-in power MOSFET simplifies the surge absorption circuit since the MOSFET guarantees the avalanche energy.
• No VDSS de-rating is required.
• Built-in constant voltage drive circuit
• Various kinds of protection functions
• Pulse-by-pulse Overcurrent Protection (OCP)
• Overvoltage Protection with latch mode (OVP)
• Thermal Shutdown with latch mode (TSD)


Pinout

Connection Diagram


Specifications

Symbol Definition Terminals Max. Ratings Units Note
IDpeak Drain Current *1 8 1.8 A Single Pulse
IDMAX Maximum switching current *5 8 1.8 A V1-2=0.82V
Ta=-20~+125
EAS Single pulse avalanche energy *2 8-1 24 mJ Single Pulse
VDD=99V,L=20mH
IL=1.8A
Vin
Vth		 Input voltage for control part
O.C.P/F.B Pin voltage		 3-2
4-2		 35
6		 V
V		  
PD1 Power dissipation for MOSFET *3 8-1 1.35 W *6
PD2 (Control IC) *4 3-2 0.14 W Specified by
Vin*Iin
TF Internal frame temperature
in operation		 - -20 ~ +125 Refer to recommended
operating temperature
Top
Tstg
Tch		 Operating ambient temperature
Storage temperature
Channel temperature		 -
-
-		 -20 ~ +125
-40 ~ +125
150

 


*1 Refer to MOS FET A.S.O curve
*2 MOS FET Tch-EAS curve
*3 Refer to MOS FET Ta-PD1 curve
*4 Refer to TF-PD2 curve for Control IC (See page 5)
*5 Maximum switching current. The maximum switching current is the Drain current determined by the drive voltage of the IC and threshold voltage (Vth) of MOS FET. Therefore, in the event that voltage drop occurs between Pin 1and Pin 2 due to patterning, the maximum switching current decreases as shown by V1-2 in Fig.1 Accordingly please use this device within the decrease value, referring to the derating curve of the maximum switching current.
*6 When embedding this hybrid IC onto the printed circuit board (board size 15mm*15mm)




Description

IRIS-A6359 is a hybrid IC consists from power MOSFET and a controller IC, designed for PRC fly-back converter type SMPS (Switching Mode Power Supply) applications, applicable for PRC operation for small power SMPS. This IRIS-A6359 realizes downsizing and standardizing of a power supply system reducing external components count and simplifying the circuit designs. (Note). PRC is abbreviation of "Pulse Ratio Control" (On-width control with fixed OFF-time).




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