IRIS-A6351

• Oscillator is provided on the monolithic control IC with adopting On-Chip- Trimming technology.
• Small temperature characteristics variation by adopting a comparator to compensate for temperature on the control part.
• Low start-up circuit current (50uA max)
• Built-in Active Low-Pass Filter for stabilizing the operation in case of light load
• Avalanche energy guaranteed MOSFET with high VDSS
• The built-in power MOSFET simplifies the surge absorption circuit since the MOSFET guarantees the avalanche energy.
• No VDSS de-rating is required.
• Built-in constant voltage drive circuit
• Various kinds of protection functions
• Pulse-by-pulse Overcurrent Protection (OCP)
• Overvoltage Protection with latch mode (OVP)
• Thermal Shutdown with latch mode (TSD)

*1 Refer to MOS FET A.S.O curve
*2 MOS FET Tch-EAS curve
*3 Refer to MOS FET Ta-PD1 curve
*4 Refer to TF-PD2 curve for Control IC (See page 5)
*5 Maximum switching current. The maximum switching current is the Drain current determined by the drive voltage of the IC and threshold voltage (Vth) of MOS FET. Therefore, in the event that voltage drop occurs between Pin 1and Pin 2 due to patterning, the maximum switching current decreases as shown by V1-2 in Fig.1 Accordingly please use this device within the decrease value, referring to the derating curve of the maximum switching current.
*6 When embedding this hybrid IC onto the printed circuit board (board size 15mm*15mm)

IRIS-A6351 is a hybrid IC consists from power MOSFET and a controller IC, designed for PRC fly-back converter type SMPS (Switching Mode Power Supply) applications, applicable for PRC operation for small power SMPS. This IRIS-A6351 realizes downsizing and standardizing of a power supply system reducing external components count and simplifying the circuit designs. (Note). PRC is abbreviation of "Pulse Ratio Control" (On-width control with fixed OFF-time).