IRIS-A6331

Features: • Oscillator is provided on the monolithic control with adopting On-Chip- Trimming technology.• Small temperature characteristics variation by adopting a comparator to compensate for temperature on the control part.• Low start-up circuit current (50uA max)• Built-...

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SeekIC No. : 004378170 Detail

IRIS-A6331: Features: • Oscillator is provided on the monolithic control with adopting On-Chip- Trimming technology.• Small temperature characteristics variation by adopting a comparator to compensa...

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Part Number:
IRIS-A6331
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/6/6

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Product Details

Description



Features:

• Oscillator is provided on the monolithic control with adopting On-Chip- Trimming technology.
• Small temperature characteristics variation by adopting a comparator to compensate for temperature on the control part.
• Low start-up circuit current (50uA max)
• Built-in Active Low-Pass Filter for stabilizing the operation in case of light load
• Avalanche energy guaranteed MOSFET with high VDSS
• The built-in power MOSFET simplifies the surge absorption circuit since the MOSFET guarantees the avalanche energy.
• No VDSS de-rating is required.
• Built-in constant voltage drive circuit
• Various kinds of protection functions
• Pulse-by-pulse Overcurrent Protection (OCP)
• Overvoltage Protection with latch mode (OVP)
• Thermal Shutdown with latch mode (TSD)




Pinout

  Connection Diagram


Specifications

Symbol Definition Terminals Max.Ratings Units Note
IDpeak Drain Current *1 8 3.54 A Single Pulse
IDMAX Maximum switching current *5 8 3.54 A V2-3=0.78V Ta=-20~+125
EAS Single pulse avalanche energy *2 8-1 32 mJ VDD=99V, L=20mH ILpeak=2.8A Single Pulse
Vin Input voltage for control part 3-2 35 V  
Vth O.C.P/F.B Pin voltage 4-2 6 V  
PD1 Power dissipation for MOSFET *3 8-1 1.35 W *6
PD2 Power dissipation for control part 3-2 0.14 W Specified by Vin*Iin
(Control IC) *4
TF Internal frame temperature - -20 ~ +125 Refer to recommended
in operation operating temperature
Top Operating ambient temperature - -20 ~ +125  
Tstg Storage temperature - -40 ~ +125  
Tch Channel temperature - 150  

*1 Refer to MOS FET A.S.O curve
*2 MOS FET Tch-EAS curve
*3 Refer to MOS FET Ta-PD1 curve
*4 Refer to TF-PD2 curve for Control IC (See page 5)
*5 Maximum switching current. The maximum switching current is the Drain current determined by the drive voltage of the IC and threshold voltage (Vth) of MOS FET. Therefore, in the event that voltage drop occurs between Pin 1and Pin 2 due to patterning, the maximum switching current decreases as shown by V1-2 in Fig.1 Accordingly please use this device within the decrease value, referring to the derating curve of the maximum switching current.
*6 When embedding this hybrid IC onto the printed circuit board (board size 15mm*15mm)




Description

IRIS-A6331 is a hybrid IC consists from power MOSFET and a controller IC, designed for PRC fly-back converter type SMPS (Switching Mode Power Supply) applications, applicable for PRC operation for small power SMPS. This IRIS-A6331 realizes downsizing and standardizing of a power supply system reducing external components count and simplifying the circuit designs. (Note). PRC is abbreviation of "Pulse Ratio Control" (On-width control with fixed OFF-time).




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