IRHI7460SE

International Rectifier's (SEE) RAD HARD technology HEXFETs IRHI7460SE demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier's RAD HARD HEXFETs IRHI7460SE eretain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the SEE process utilizes International Rectifier's patented HEXFET technology, the user can expect the highest quality and reliability in the industry.

RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs IRHI7460SE, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.

They are well-suited for applications of IRHI7460SE such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments.