Position: Home  > All Categories> Integrated Circuits (ICs) > IRHE9110

IRHE9110

Features: · Single Event Effect (SEE) Hardened· Low RDS(on)· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Package· Surface Mount· Light WeightSpecifications Parameter Units ID @ VGS = -12V, TC=25 Continuous Drain Curr...

product image

IRHE9110 Picture
See larger image
SeekIC No. : 004377956 Detail

IRHE9110: Features: · Single Event Effect (SEE) Hardened· Low RDS(on)· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Package· Surface Mount· Light WeightS...

IRHE9110 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IRHE9110
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/21

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

· Single Event Effect (SEE) Hardened
· Low RDS(on)
· Low Total Gate Charge
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Ceramic Package
· Surface Mount
· Light Weight


Specifications

 

Parameter

 

Units

ID @ VGS = -12V, TC=25

Continuous Drain Current

-2.3

A

ID @ VGS = -12V, TC=100

Continuous Drain Current

-1.5

IDM

Pulsed Drain Current

-9.2

PD @ TC = 25

Max. Power Dissipation

15

W

 

Linear Derating Factor

0.1

W/

VGS

Gate-to-Source Voltage

±20

V

EAS

Single Pulse Avalanche Energy

75

mJ

IAR

Avalanche Current

-2.3

A

EAR

Repetitive Avalanche Energy

1.5

mJ

dv/dt

Peak Diode Recovery dv/dt

-12.5

V/ns

TJ
TSTG

Operating Junction
Storage Temperature Range

-55 to 150

 

Pckg. Mounting Surface Temp.

300 (for 5s)

 

Weight

0.42 (Typical)

g


Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
VDD = -25V, starting TJ = 25, L= 28mH Peak IL = -2.3A, VGS = -12V
ISD -2.3A, di/dt -540A/µs, VDD -100V, TJ 150


Description

International Rectifier's RAD-HardTM HEXFET® technology IRHE9110 provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices IRHE9110 have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices IRHE9110 retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Memory Cards, Modules
WT32
VTL5C7
Discrete Semiconductor Products
T508N12TOF
MUR20040
Soldering, Desoldering, Rework Products
TGK-900M-B
TGK-900M-1.6D
Test Equipment
TOP853
TOP2005
Switches
US32DMRJ
HBGQ22P-11ET
Fans, Thermal Management
3610ML-05W-B49
1608KL-05W-B39
View more