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IRH8450

Features: ·Radiatio·Hardened up to 1 x 106 Rads (Si)·Single Event Burnout (SEB) Hardened·Single Event Gate Rupture (SEGR) Hardened·Gamma Dot (Flash X-Ray) Hardened·Neutron Tolerant·Identical Pre- and Post-Electrical Test Conditions·Repetitive Avalanche Rating·Dynamic dv/dt Rating·Simple Drive Requ...

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SeekIC No. : 004377945 Detail

IRH8450: Features: ·Radiatio·Hardened up to 1 x 106 Rads (Si)·Single Event Burnout (SEB) Hardened·Single Event Gate Rupture (SEGR) Hardened·Gamma Dot (Flash X-Ray) Hardened·Neutron Tolerant·Identical Pre- an...

IRH8450 Data Sheet

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Part Number:
IRH8450
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

·Radiatio·Hardened up to 1 x 106 Rads (Si)
·Single Event Burnout (SEB) Hardened
·Single Event Gate Rupture (SEGR) Hardened
·Gamma Dot (Flash X-Ray) Hardened
·Neutron Tolerant
·Identical Pre- and Post-Electrical Test Conditions
·Repetitive Avalanche Rating
·Dynamic dv/dt Rating
·Simple Drive Requirements
·Ease of Paralleling
·Hermetically Sealed


Specifications

  Parameter   Units
ID @ VGS = 12V, TC = 25°C
 Continuous Drain Current
11
A
ID @ VGS = 12V, TC = 100°C
 Continuous Drain Current
7.0
IDM
 Pulsed Drain Current
44
PD @ TC = 25°C
 Max. Power Dissipation
150
W
 Linear Derating Factor
1.2
W/°C
VGS
 Gate-to-Source Voltage
±20
V
EAS
 Single Pulse Avalanche Energy
500
mJ
IAR
 Avalanche Current
11
A
EAR
 Repetitive Avalanche Energy
15
mJ
dv/dt
 Peak Diode Recovery dv/dt
3.5
V/ns
TJ
TSTG
 Operating Junction
Storage Temperature Range
-55 to 150
  Lead Temperature
300 (0.063 in. (1.6mm) from case for 10 sec.)
  Weight
11.5(Typical)
g
For footnotes refer to the last page


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