IRGCC50FE

IRGCC50FE is a kind of IGBT die in wafer form.

What comes next is about the electrical characteristics of IRGCC50FE (wafer form). The maximum VCE (on) (Collector-to-Emitter Saturation Voltage) is 2.0 V at IC=20 A, TJ=25, VGE=15 V. The minimum V(BR)CES (Colletor-to-Emitter Breakdown Voltage) is 600 V at TJ=25, ICES=250A, VGE=0 V. The minimum VGE(th) (Gate Threshold Voltage) is 3.0 V and the maximum is 5.5 V at VGE=VCE, TJ=25, IC=250A. The maximum ICES (Zero Gate Voltage Collector Current) is 250A at TJ=25, VCE=600 V. The maximum IGES (Gate-to-Emitter Leakage Current) is ± 500 nA at TJ=25, VGE=±20 V.

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