MOSFET 100V Single N-Channel HEXFET
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 1.3 A | ||
Resistance Drain-Source RDS (on) : | 270 mOhms | Configuration : | Single Dual Drain | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | HexDIP-4 | Packaging : | Tube |