IRF9Z34NSTRR

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Type: MOSFET P-Channel, Metal Oxide
FET Feature: Standard
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Gate Charge (Qg) @ Vgs: 35nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 19A
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Drain to Source Voltage (Vdss): 55V
Manufacturer: International Rectifier
Power - Max: 3.8W
Rds On (Max) @ Id, Vgs: 100 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds: 620pF @ 25V


Parameters:

Technical/Catalog Information	IRF9Z34NSTRR
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	19A
Rds On (Max) @ Id, Vgs	100 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds	620pF @ 25V
Power - Max	3.8W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	35nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRF9Z34NSTRR IRF9Z34NSTRR