IRF9Z34NS

Features:

`Advanced Process Technology
`Surface Mount (IRF9Z34NS)
`Low-profile through-hole (IRF9Z34NL)
`175 Operating Temperature
`Fast Switching
`P-Channel
`Fully Avalanche Rated




Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ -10V	-19	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ -10V	-14
IDM	Pulsed Drain Current	-68
PD @TA = 25°C	Power Dissipation	3.8	W
PD @TC = 25°C	Power Dissipation	68	W
	Linear Derating Factor	0.45	W/
VGS	Gate-to-Source Voltage	± 20	V
EAS	Single Pulse Avalanche Energy	180	mJ
IAR	Avalanche Current	-10	A
EAR	Repetitive Avalanche Energy	6.8	mJ
dv/dt	Peak Diode Recovery dv/dt	-5.0	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )

Description

Fifth Generation HEXFETs IRF9Z34NS from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2Pak IRF9Z34NS is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRF9Z34NS) is available for lowprofile applications.




Parameters:

Technical/Catalog Information	IRF9Z34NS
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	19A
Rds On (Max) @ Id, Vgs	100 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds	620pF @ 25V
Power - Max	3.8W
Packaging	Bulk
Gate Charge (Qg) @ Vgs	35nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRF9Z34NS IRF9Z34NS