IRF9Z34N

Features:

`Advanced Process Technology
`Dynamic dv/dt Rating
`175 Operating Temperature
`Fast Switching
`P-Channel
`Fully Avalanche Rated




Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ -10V	-19	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ -10V	-14
IDM	Pulsed Drain Current	-68
PD @TC = 25°C	Power Dissipation	68	W
	Linear Derating Factor	0.45	W/
VGS	Gate-to-Source Voltage	± 20	V
EAS	Single Pulse Avalanche Energy	180	mJ
IAR	Avalanche Current	-10	A
EAR	Repetitive Avalanche Energy	6.8	mJ
dv/dt	Peak Diode Recovery dv/dt	-5.0	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting torque, 6-32 or M3 srew	10 lbf.in (1.1N.m)

Description

Fifth Generation HEXFETs IRF9Z34N from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package IRF9Z34N is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.





Parameters:

Technical/Catalog Information	IRF9Z34N
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	19A
Rds On (Max) @ Id, Vgs	100 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds	620pF @ 25V
Power - Max	68W
Packaging	Bulk
Gate Charge (Qg) @ Vgs	35nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRF9Z34N IRF9Z34N