IRF9Z34

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Packaging : Tube
Continuous Drain Current : 18 A
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : - 60 V
Resistance Drain-Source RDS (on) : 0.14 Ohms


Features:






Specifications






Description

The IRF9Z34 has seven features.The first one is dynamic dv/dt rating.The second one is repetitive avalanche rated.The third one is P-channel.The fourth one is 175 operating temperature.The fifth one is fast switching.The sixth one is ease of paralleling.The seventh one is simple drive requirements.

Third generation HEXFETs of the IRF9Z34 from international rectifier provide the designer with the best combination of fast switching,ruggedized device design,low on-resistance and cost-effectiveness.The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.The low thermal resistance and low package cost of TO-220 contribute to its wide acceptance throughout the industry.

The IRF9Z34 has some absolute maximum ratings.When parameter is continuous drain current,VGS @ 10V,the symbol is ID@TC=25,the Max. is -18,the units is A.When parameter is continuous drain current,VGS @ 10V,the symbol is ID@TC=100,the Max. is -13,the units is A.When parameter is pulsed drain current,the symbol is IDM,the Max. is -72,the units is A.When parameter is power dissipation,the symbol is PD@TC=25,the Max. is 88,the units is W.When parameter is junction and storage temperature range,the Max. is -55 to +175,the units is .When parameter of the IRF9Z34 is soldering temperature,for 10 seconds,the Max. is 300(1.6mm from case),the units is .When parameter is mounting torgue,6-32 or M3 screw,the Max. is 10 lbf-in(1.1 N-m).