IRF9Z24S

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Package / Case : D2PAK
Transistor Polarity : P-Channel
Packaging : Tube
Drain-Source Breakdown Voltage : - 60 V
Continuous Drain Current : 11 A
Resistance Drain-Source RDS (on) : 0.28 Ohms


Features:

`Advanced Process Technology
`Surface Mount (IRF9Z24S)
`Low-profile through-hole (IRF9Z24L)
`175 Operating Temperature
`Fast Switching
`P- Channel
`Fully Avalanche Rated


Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	-11	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	-7.7
IDM	Pulsed Drain Current	-44
PD @TA = 25°C	Power Dissipation	3.7	W
PD @TC = 25°C	Power Dissipation	60	W
	Linear Derating Factor	0.40	W/
VGS	Gate-to-Source Voltage	± 20	V
EAS	Single Pulse Avalanche Energy	240	mJ
IAR	Avalanche Current	-11	A
EAR	Repetitive Avalanche Energy	6.0	mJ
dv/dt	Peak Diode Recovery dv/dt	-4.5	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )

Description

Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The IRF9Z24S is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRF9Z24S) is available for lowprofile applications.