IRF9Z24NPBF

Resistance Drain-Source RDS (on) :
Configuration :
Maximum Operating Temperature :
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Packaging : Tube
Package / Case : TO-220AB
Gate-Source Breakdown Voltage : 20 V
Continuous Drain Current : - 12 A
Drain-Source Breakdown Voltage : - 55 V


Description

The IRF9Z24NPBF is a HEXFET power MOSFET.Fifth generation HEXFEfs from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device  design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Features of the IRF9Z24NPBF are:(1)advanced process technology; (2)dynamic dv/dt rating; (3)175 operating temperature; (4)fast switching; (5)fully avalanche rated; (6)lead-free;(7)P-channel.The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

The absolute maximum ratings of the IRF9Z24NPBF can be summarized as:(1)soldering temperature, for 10 seconds:300;(2)storage temperature range:-55 to 175;(3)operating junction temperature range:-55 to 175;(4)pulsed drain current:-48 A;(5)gate-to-source voltage:±20V;(6)power dissipation:45W.The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department of the IRF9Z24NPBF for the latest version of the datasheet(s).In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users' fail-safe precautions or other arrangement.In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user's units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.

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Parameters:

Technical/Catalog Information	IRF9Z24NPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	12A
Rds On (Max) @ Id, Vgs	175 mOhm @ 7.2A, 10V
Input Capacitance (Ciss) @ Vds	350pF @ 25V
Power - Max	45W
Packaging	Tube
Gate Charge (Qg) @ Vgs	19nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF9Z24NPBF IRF9Z24NPBF