MOSFET P-CH 55V 12A TO-262
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Series: | HEXFET® | Manufacturer: | International Rectifier | ||
FET Type: | MOSFET P-Channel, Metal Oxide | Gain : | 19.5 dB | ||
Transistor Type: | - | Current - Collector (Ic) (Max): | - | ||
FET Feature: | Standard | Drain to Source Voltage (Vdss): | 55V | ||
Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 12A | ||
Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
Rds On (Max) @ Id, Vgs: | 175 mOhm @ 7.2A, 10V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
Vgs(th) (Max) @ Id: | 4V @ 250µA | Gate Charge (Qg) @ Vgs: | 19nC @ 10V | ||
Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 350pF @ 25V | ||
Power - Max: | 3.8W | Mounting Type: | Through Hole | ||
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA | Supplier Device Package: | TO-262 |
Technical/Catalog Information | IRF9Z24NLPBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | P-Channel |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25° C | 12A |
Rds On (Max) @ Id, Vgs | 175 mOhm @ 7.2A, 10V |
Input Capacitance (Ciss) @ Vds | 350pF @ 25V |
Power - Max | 3.8W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 19nC @ 10V |
Package / Case | TO-262-3 (Straight Leads) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRF9Z24NLPBF IRF9Z24NLPBF |