IRF9Z24

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : - 60 V
Continuous Drain Current : 11 A
Resistance Drain-Source RDS (on) : 0.28 Ohms


Description

The IRF9Z24 is a kind of power mosfets whose VDS=-60V, RDS(ON)=0.28, ID=-9.7A. If you want to know about this IC, please go to our website.

The features of IRF9Z24 can be summarized as (1)lower rosrom; (2)improved inductive nmggednesa; (3)fast switching times; (4)rugged polysilicon gate cell structure; (5)lower input capacitance; (6)extended safe operating area; (7)improved hl temperature reliability.

The absolute maximum ratings of IRF9Z24 are (1)drain-source voltage VDSS: -60V Vdc ; (2)drain-gate voltage (RGS=1.0M) VDGR: -60VVdc ; (3)gate-source voltage VGS: ±20 Vdc ; (4)continuous drain current Tc=25°C ID: -9.7 Adc; (5)continuous drain current Tc=100°C ID: -6.8 Adc ; (6)draim current- pulsed IDM: -39Adc; (7)gate current pulsed IGM: ±1.5Adc ; (8)single pulsed avalanche energy EAs: 4.2mJ ; (9)avalanche current IAS: -9.7 A ; (10)total power dissipation at Tc=25°C 48 Watts/0.32 W/°C(derate above 25°C) ; (11)operating and storage and junction temperature range of the IRF9Z24 Tj, Tstg: -55 to +175°C; (12)maximum lead temp. for soldering purposes, 1/8" from cas for 5 seconds TL: 300°C.