IRF9953TR

MOSFET 2P-CH 30V 2.3A 8-SOIC

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SeekIC No. : 003430061 Detail

IRF9953TR: MOSFET 2P-CH 30V 2.3A 8-SOIC

floor Price/Ceiling Price

US $ .41~.41 / Piece | Get Latest Price
Part Number:
IRF9953TR
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~4000
  • Unit Price
  • $.41
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V Drain Source Voltage VDS : + / - 20 V
Current - Continuous Drain (Id) @ 25° C: 2.3A Rds On (Max) @ Id, Vgs: 250 mOhm @ 1A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) @ Vds: 190pF @ 15V Power - Max: 2W
Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO    

Description

FET Feature: Logic Level Gate
Mounting Type: Surface Mount
FET Type: 2 P-Channel (Dual)
Drain to Source Voltage (Vdss): 30V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) @ Vgs: 12nC @ 10V
Power - Max: 2W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Current - Continuous Drain (Id) @ 25° C: 2.3A
Supplier Device Package: 8-SO
Packaging: Tape & Reel (TR)
Series: HEXFET®
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 250 mOhm @ 1A, 10V
Input Capacitance (Ciss) @ Vds: 190pF @ 15V


Parameters:

Technical/Catalog InformationIRF9953TR
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 P-Channel (Dual)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C2.3A
Rds On (Max) @ Id, Vgs250 mOhm @ 1A, 10V
Input Capacitance (Ciss) @ Vds 190pF @ 15V
Power - Max2W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs12nC @ 10V
Package / Case8-SOIC (3.9mm Width)
FET FeatureLogic Level Gate
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IRF9953TR
IRF9953TR



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