IRF9953TR, US $ .41-.41, IRF9953TR DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 003430061 Detail

IRF9953TR: MOSFET 2P-CH 30V 2.3A 8-SOIC

IRF9953TR Data Sheet

US $ .41~.41 / Piece | Get Latest Price

Part Number:: IRF9953TR
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Supply Ability:: 5000

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Product Details

Quick Details

Series:	HEXFET®	Manufacturer:	International Rectifier
FET Type:	2 P-Channel (Dual)	FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	30V	Drain Source Voltage VDS :	+ / - 20 V
Current - Continuous Drain (Id) @ 25° C:	2.3A	Rds On (Max) @ Id, Vgs:	250 mOhm @ 1A, 10V
Vgs(th) (Max) @ Id:	1V @ 250µA	Gate Charge (Qg) @ Vgs:	12nC @ 10V
Input Capacitance (Ciss) @ Vds:	190pF @ 15V	Power - Max:	2W
Mounting Type:	Surface Mount	Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO

Description

FET Feature: Logic Level Gate
Mounting Type: Surface Mount
FET Type: 2 P-Channel (Dual)
Drain to Source Voltage (Vdss): 30V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) @ Vgs: 12nC @ 10V
Power - Max: 2W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Current - Continuous Drain (Id) @ 25° C: 2.3A
Supplier Device Package: 8-SO
Packaging: Tape & Reel (TR)
Series: HEXFET®
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 250 mOhm @ 1A, 10V
Input Capacitance (Ciss) @ Vds: 190pF @ 15V

Parameters:

Technical/Catalog Information	IRF9953TR
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 P-Channel (Dual)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	2.3A
Rds On (Max) @ Id, Vgs	250 mOhm @ 1A, 10V
Input Capacitance (Ciss) @ Vds	190pF @ 15V
Power - Max	2W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	12nC @ 10V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRF9953TR IRF9953TR

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IRF9953TR

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