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SeekIC No. : 003429836 Detail

IRF9952TR: MOSFET N+P 30V 2.3A 8-SOIC

IRF9952TR Data Sheet

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Part Number:: IRF9952TR
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Supply Ability:: 5000

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Upload time: 2024/7/15

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Product Details

Quick Details

Series:	HEXFET®	Manufacturer:	International Rectifier
FET Type:	N and P-Channel	FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	30V	Drain Source Voltage VDS :	+ / - 20 V
Current - Continuous Drain (Id) @ 25° C:	3.5A, 2.3A	Rds On (Max) @ Id, Vgs:	100 mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id:	1V @ 250µA	Gate Charge (Qg) @ Vgs:	14nC @ 10V
Input Capacitance (Ciss) @ Vds:	190pF @ 15V	Power - Max:	2W
Mounting Type:	Surface Mount	Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO

Description

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 30V
Vgs(th) (Max) @ Id: 1V @ 250µA
Power - Max: 2W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) @ Vgs: 14nC @ 10V
Supplier Device Package: 8-SO
Packaging: Tape & Reel (TR)
Series: HEXFET®
Manufacturer: International Rectifier
Input Capacitance (Ciss) @ Vds: 190pF @ 15V
Current - Continuous Drain (Id) @ 25° C: 3.5A, 2.3A
Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V

Parameters:

Technical/Catalog Information	IRF9952TR
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N and P-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	3.5A, 2.3A
Rds On (Max) @ Id, Vgs	100 mOhm @ 2.2A, 10V
Input Capacitance (Ciss) @ Vds	190pF @ 15V
Power - Max	2W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	14nC @ 10V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRF9952TR IRF9952TR

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IRF9952TR

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