IRF9952

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 30V
Vgs(th) (Max) @ Id: 1V @ 250µA
Power - Max: 2W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) @ Vgs: 14nC @ 10V
Supplier Device Package: 8-SO
Series: HEXFET®
Manufacturer: International Rectifier
Input Capacitance (Ciss) @ Vds: 190pF @ 15V
Current - Continuous Drain (Id) @ 25° C: 3.5A, 2.3A
Rds On (Max) @ Id, Vgs: 100 mOhm @ 2.2A, 10V
Packaging: Tube


Features:

·Generation V Technology
·Ultra Low On-Resistance
·Dual N and P Channel MOSFET
·Surface Mount
·Very Low Gate Charge and Switching Losses
·Fully Avalanche Rated


Pinout




Specifications

		Symbol	Maximum		Units
			N-Channel	P-Channel
Drain-Source Voltage		VDS	30		V
Gate-Source Voltage		VGS	± 20
Continuous Drain Current	TA = 25	ID	3.5	-2.3	A
	TA = 70		2.8	-1.8
Pulsed Drain Current		IDM	16	-10
Continuous Source Current (Diode Conduction)		IS	1.7	-1.3
Maximum Power Dissipation	TA = 25	PD	2.0		W
	TA = 70		1.3
Single Pulse Avalanche Energy		EAS	44	57	mJ
Avalanche Current		IAR	2.0	-1.3	A
Repetitive Avalanche Energy		EAR	0.25		mJ
Peak Diode Recovery dv/dt		dv/dt	5.0	-5.0	V/ ns
Junction and Storage Temperature Range		TJ, TSTG	-55 to + 150

Description

Fifth Generation HEXFETs IRF9952 from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The SO-8 IRF9952 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques.