MOSFET
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 20 V | ||
Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 10 A | ||
Resistance Drain-Source RDS (on) : | 18.3 mOhms | Configuration : | Dual | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOIC-8 | Packaging : | Tube |
Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box
Lead-Free
Symbol | Parameter |
Q1 Max. |
Q2 Max. |
Units |
VDS | Drain-Source Voltage |
20 |
V
| |
VGS | Gate-to-Source Voltage |
±20 | ||
ID @ TC = 25 | Continuous Drain Current, VGS @ 10V |
10 |
12 |
A |
ID @ TC= 100 | Continuous Drain Current, VGS @ 10V |
8.3 |
9.9 | |
IDM | Pulsed Drain Current1 |
83 |
98 | |
PD @TC = 25 | Power Dissipation |
2.0 |
W | |
PD @TA = 70 | Power Dissipation |
1.3 | ||
Linear Derating Factor |
0.016 |
W/ | ||
TJ | Operating Junction and |
-55 to 150 |
||
TSTG | Storage Temperature Range |
Technical/Catalog Information | IRF9910PBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | 2 N-Channel (Dual) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 10A, 12A |
Rds On (Max) @ Id, Vgs | 13.4 mOhm @ 10A, 10V |
Input Capacitance (Ciss) @ Vds | 900pF @ 10V |
Power - Max | 2W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 11nC @ 4.5V |
Package / Case | 8-SOIC (3.9mm Width) |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRF9910PBF IRF9910PBF |