IRF9910

FET Feature: Logic Level Gate
Mounting Type: Surface Mount
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 20V
Power - Max: 2W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) @ Vgs: 11nC @ 4.5V
Supplier Device Package: 8-SO
Series: HEXFET®
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 13.4 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Current - Continuous Drain (Id) @ 25° C: 10A, 12A
Input Capacitance (Ciss) @ Vds: 900pF @ 10V
Packaging: Tube


Features:

·Very Low RDS(on) at 4.5V VGS
·Low Gate Charge
·Fully Characterized Avalanche Voltage and Current
·20V VGS Max. Gate Rating


Application

Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box


Specifications

	Parameter	Q1 Max.	Q2 Max.	Units
VDS	Drain-to-Source Voltage	20		V
VGS	Gate-to-Source Voltage	± 20
ID @ TA = 25	Continuous Drain Current, VGS @ 10V	10	12	A
ID @ TA = 70	Continuous Drain Current, VGS @ 10V	8.3	9.9
IDM	Pulsed Drain Current	83	98
PD @TA = 25	Power Dissipation	2.0		W
PD @TA = 70	Power Dissipation	1.3
	Linear Derating Factor	0.016		W/
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 150