IRF9640L

MOSFET P-CH 200V 11A TO-262

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SeekIC No. : 003431484 Detail

IRF9640L: MOSFET P-CH 200V 11A TO-262

floor Price/Ceiling Price

Part Number:
IRF9640L
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/24

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Product Details

Quick Details

Series: - Manufacturer: Vishay Siliconix
FET Type: MOSFET P-Channel, Metal Oxide Gain : 19.5 dB
Transistor Type: - Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 200V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 11A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 500 mOhm @ 6.6A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) @ Vgs: 44nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 1200pF @ 25V
Power - Max: 3W Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: I2PAK    

Description

Series: -
Manufacturer: Vishay Siliconix
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Type: MOSFET P-Channel, Metal Oxide
FET Feature: Standard
Power - Max: 3W
Vgs(th) (Max) @ Id: 4V @ 250µA
Drain to Source Voltage (Vdss): 200V
Gate Charge (Qg) @ Vgs: 44nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 11A
Packaging: Tube
Mounting Type: Through Hole
Rds On (Max) @ Id, Vgs: 500 mOhm @ 6.6A, 10V
Input Capacitance (Ciss) @ Vds: 1200pF @ 25V
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: I2PAK


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