MOSFET
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 100 V | ||
Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | - 23 A | ||
Resistance Drain-Source RDS (on) : | 117 m Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | D2PAK | Packaging : | Tube |
Characteristic | Parameter | Max. | Unit |
ID @ TC = 25 ID @ TC = 100 IDM |
Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current |
-23 -14 -92 |
A |
PD @TC = 25 PD @ TC = 25 |
Maximum Power Dissipation Maximum Power Dissipation |
110 3.1 |
V |
Linear Derating Factor | 0.9 | W/ | |
VGS | Gate-to-Source Voltage | ± 20 | V |
EAS |
Single Pulse Avalanche Energy |
84 | mJ |
IAR EAR |
Avalanche Current Repetitive Avalanche Energy |
11 -14 |
A mJ |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 150 | |
Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) |
Features of this design are a 150 junction operating temperature IRF9540NSPbF, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications.
Technical/Catalog Information | IRF9540NSPBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | P-Channel |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25° C | 23A |
Rds On (Max) @ Id, Vgs | 117 mOhm @ 14A, 10V |
Input Capacitance (Ciss) @ Vds | 1450pF @ 25V |
Power - Max | 3.1W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 110nC @ 10V |
Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRF9540NSPBF IRF9540NSPBF |