IRF9540NS

Features:

`Advanced Process Technology
`Surface Mount (IRF9540S)
`Low-profile through-hole (IRF9540L)
`175 Operating Temperature
`Fast Switching
`P-Channel
`Fully Avalanche Rated




Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ -10V	-23	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ -10V	-16
IDM	Pulsed Drain Current	-76
PD @TA = 25°C	Power Dissipation	3.8	W
PD @TC = 25°C	Power Dissipation	140	W
	Linear Derating Factor	0.91	W/
VGS	Gate-to-Source Voltage	± 20	V
EAS	Single Pulse Avalanche Energy	430	mJ
IAR	Avalanche Current	-11	A
EAR	Repetitive Avalanche Energy	14	mJ
dv/dt	Peak Diode Recovery dv/dt	-5.0	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )

Description

Fifth Generation HEXFETs IRF9540NS from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2Pak IRF9540NS is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRF9540NS) is available for lowprofile applications.