IRF9540NPBF

Resistance Drain-Source RDS (on) :
Configuration :
Maximum Operating Temperature :
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Packaging : Tube
Package / Case : TO-220AB
Gate-Source Breakdown Voltage : 20 V
Drain-Source Breakdown Voltage : - 100 V
Continuous Drain Current : - 23 A


Description

The IRF9540NPBF is a HEXFET power MOSFET.Fifth Generation HEXFETs from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Features of the IRF9540NPBF are:(1)lead-free; (2)advanced process technology; (3)dynamic dv/dt rating; (4)175 operating temperature; (5)fast switching; (6)p-channel; (7)fully avalanche rated.The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

The absolute maximum ratings of the IRF9540NPBF can be summarized as:(1)max device voltage :6V;(2)storage temperature range:-55 to 175;(3)operating junction temperature range:-55 to 175 ;(4)power dissipation:140W;(5)soldering temperature,for 10 sec:300.The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite).

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Parameters:

Technical/Catalog Information	IRF9540NPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	23A
Rds On (Max) @ Id, Vgs	117 mOhm @ 11A, 10V
Input Capacitance (Ciss) @ Vds	1300pF @ 25V
Power - Max	140W
Packaging	Tube
Gate Charge (Qg) @ Vgs	97nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF9540NPBF IRF9540NPBF