IRF9540NL

MOSFET P-CH 100V 23A TO-262

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SeekIC No. : 003433603 Detail

IRF9540NL: MOSFET P-CH 100V 23A TO-262

floor Price/Ceiling Price

Part Number:
IRF9540NL
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET P-Channel, Metal Oxide Gain : 19.5 dB
Transistor Type: - Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 100V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 23A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 117 mOhm @ 11A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) @ Vgs: 97nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 1300pF @ 25V
Power - Max: 3.8W Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: TO-262    

Description

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Type: MOSFET P-Channel, Metal Oxide
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Packaging: Tube
Mounting Type: Through Hole
Input Capacitance (Ciss) @ Vds: 1300pF @ 25V
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Current - Continuous Drain (Id) @ 25° C: 23A
Manufacturer: International Rectifier
Power - Max: 3.8W
Gate Charge (Qg) @ Vgs: 97nC @ 10V
Supplier Device Package: TO-262
Rds On (Max) @ Id, Vgs: 117 mOhm @ 11A, 10V


Features:

`Advanced Process Technology
`Surface Mount (IRF9540S)
`Low-profile through-hole (IRF9540L)
`175 Operating Temperature
`Fast Switching
`P-Channel
`Fully Avalanche Rated





Specifications

Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -23 A
ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -16
IDM Pulsed Drain Current -76
PD @TA = 25°C Power Dissipation 3.8 W
PD @TC = 25°C Power Dissipation 140 W
Linear Derating Factor 0.91 W/
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy 430 mJ
IAR Avalanche Current -11 A
EAR Repetitive Avalanche Energy 14 mJ
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175
Soldering Temperature, for 10 seconds 300 (1.6mm from case )





Description

Fifth Generation HEXFETs IRF9540NL from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2Pak IRF9540NL is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRF9540NL) is available for lowprofile applications.




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