MOSFET P-CH 100V 14A TO-220AB
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Parameter | Max. | Units | |
ID @ TC = 25°C | Continuous Drain Current, VGS @ -10V | -14 | A |
ID @ TC = 100°C | Continuous Drain Current, VGS @ -10V | -10 | |
IDM | Pulsed Drain Current | -56 | |
PD @TC = 25°C | Power Dissipation | 79 | W |
Linear Derating Factor | 0.53 | W/ | |
VGS | Gate-to-Source Voltage | ± 20 | V |
EAS | Single Pulse Avalanche Energy | 250 | mJ |
IAR | Avalanche Current | -8.4 | A |
EAR | Repetitive Avalanche Energy | 7.9 | mJ |
dv/dt | Peak Diode Recovery dv/dt | -5.0 | V/ns |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | |
Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) |
Technical/Catalog Information | IRF9530N |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | P-Channel |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25° C | 14A |
Rds On (Max) @ Id, Vgs | 200 mOhm @ 8.4A, 10V |
Input Capacitance (Ciss) @ Vds | 760pF @ 25V |
Power - Max | 3.8W |
Packaging | Bulk |
Gate Charge (Qg) @ Vgs | 58nC @ 10V |
Package / Case | TO-220-3 (Straight Leads) |
FET Feature | Standard |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | IRF9530N IRF9530N |