IRF9530N

MOSFET P-CH 100V 14A TO-220AB

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IRF9530N Picture
SeekIC No. : 004376906 Detail

IRF9530N: MOSFET P-CH 100V 14A TO-220AB

floor Price/Ceiling Price

US $ .64~.64 / Piece | Get Latest Price
Part Number:
IRF9530N
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 1~400
  • Unit Price
  • $.64
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/12

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Product Details

Description



Features:

·Advanced Process Technology
·Dynamic dv/dt Rating
·175°C Operating Temperature
·Fast Switching
·P-Channel
·Fully Avalanche Rated





Specifications

Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -14 A
ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -10
IDM Pulsed Drain Current -56
PD @TC = 25°C Power Dissipation 79 W
Linear Derating Factor 0.53 W/
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy 250 mJ
IAR Avalanche Current -8.4 A
EAR Repetitive Avalanche Energy 7.9 mJ
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175
Soldering Temperature, for 10 seconds 300 (1.6mm from case )





Description

Fifth Generation HEXFETs IRF9530N from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package IRF9530N is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.




Parameters:

Technical/Catalog InformationIRF9530N
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityP-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C14A
Rds On (Max) @ Id, Vgs200 mOhm @ 8.4A, 10V
Input Capacitance (Ciss) @ Vds 760pF @ 25V
Power - Max3.8W
PackagingBulk
Gate Charge (Qg) @ Vgs58nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IRF9530N
IRF9530N



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