IRF9530

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 12 A
Resistance Drain-Source RDS (on) : 0.3 Ohms
Drain-Source Breakdown Voltage : - 100 V


Features:

• 12A, 100V
• rDS(ON) = 0.300W
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
  - TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

Drain to Source Breakdown Voltage (Note 1)	VDS	-100	V
Drain to Gate Voltage (RGS = 20kW) (Note 1)	VDGR	-100	V
Continuous Drain Current	ID	-12	A
TC = 100	ID	-7.5	A
Pulsed Drain Current (Note 3)	IDM	-48	A
Gate to Source Voltage	VGS	±20	V
Maximum Power Dissipation	PD	75	W
Dissipation Derating Factor		0.6	W/
Single Pulse Avalanche Energy Rating (Note 4)	EAS	500	mJ
Operating and Storage Temperature	TJ, TSTG	-55 to 150
Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. Package Body for 10s, See Techbrief 334	TL Tpkg	300 260

Description

These are P-Channel enhancement mode silicon gate power field effect transistors IRF9530. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. The high input impedance IRF9530 allows these types to be operated directly from integrated circuits.