IRF9520SPBF

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Package / Case : D2PAK
Transistor Polarity : P-Channel
Packaging : Tube
Drain-Source Breakdown Voltage : - 100 V
Resistance Drain-Source RDS (on) : 0.6 Ohms
Continuous Drain Current : - 6.8 A


Description

The IRF9520SPbF is deisgned as the third generational HEXFET from international rectifier which provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

IRF9520SPbF has eight features. (1)Surface mount. (2)Available in tape & reel. (3)Dynamic dv/dt rating. (4)Repetitive avalanche rated. (5)P-channel. (6)175°C operating temperature. (7)Fast switching. (8)Lead free. That are all the main features.

Some absolute maximum ratings IRF9520SPbF have been concluded into several points as follow. (1)Its continuous drain current Vgs=-10V would be max -6.8A at 25°C and would be max -4.8A at 100°C. (2)Its pulsed drain current would be -27A. (3)Its power dissipation would be 60W. (4)Its power dissipation (PCB mount) would be 3.7W. (5)Its linear derating factor would be 0.40W/°C. (6)Its gate to source voltage would be +/-20V. (7)Its single pulse avalanche energy would be 300mJ. (8)Its repetitive avalanche energy would be 6.0mJ. (9)Its peak diode recovery dv/dt would be -5.5V/ns. (10)Its junction and storage temperature range would be from -55°C to +175°C. (11)Its soldering temperature for 10 seconds would be 300°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics IRF9520SPbF are concluded as follow. (1)Its drain to source breakdown voltage would be min -100V. (2)Its breakdown voltage temperature coefficient would be typ -0.1V/°C. (3)Its static drain to source on resistance would be max 0.6 ohms. (4)Its gate threshold voltage would be min -2.0V and max -4.0V. (5)Its forward transconductance would be min 2.0S. (6)Its drain to source leakage current would be max -100uA at Vds=100V and Vgs=0V and would be max -500uA at Vds=-80V and Vgs=0V and Tj=150°C. (7)Its gate to source forward leakage would be max -100nA at Vgs=-20V. (8)Its gate to source reverse leakage would be max 100nA at Vgs=20V. And so on. If you have any question or suggestion or want to know more information please contact us for IRF9520SPbF details. Thank you!