IRF9520S

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Package / Case : D2PAK
Transistor Polarity : P-Channel
Packaging : Tube
Drain-Source Breakdown Voltage : - 100 V
Continuous Drain Current : 6.8 A
Resistance Drain-Source RDS (on) : 0.6 Ohms


Description

The IRF9520S is one of the HEXFET power MOSFET series.Third generation HEXFETs from international rectifier provide the designer with the best combination of fast switching,ruggedized device design,low on-resistance and cost-effectiveness.

Features of the IRF9520S are:(1)surface mount; (2)available in tape and reel; (3)dynamic dv/dt rating; (4)repetitive avalanche rated; (5)p-channel ; (6)175 operating temperature; (7)fast switching.

The absolute maximum ratings of the IRF9520S can be summarized as:(1)continuous drain current,VGS@-10V:-6.8A(ID@TC=25); (2)continuous drain current,VGS@-10V:-4.8A(ID@TC=100); (3)pulsed drain current:-27A; (4)power dissipation:60W; (5)power dissipation(PCB Mount)**:3.7W; (6)linear derating factor:0.40W/; (7)linear derating factor(PCB Mount)**:0.025W/; (8)gate-to-source voltage:±20V; (9)single pulse avalanche energy:300mj; (10)avalanche current:-6.8A; (11)repetitive avalanche energy:6.0mj; (12)peak diode recovery dv/dt:-5.5V/ns; (13)junction and storage temperature range:-55~175; (14)soldering temperature,for 10 seconds:300(1.6mm from case).If you want to know more information such as the electrical AC characteristics about the IRF9520S, please download the datasheet in www.seekdatasheet.com .