IRF9520NL

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Type: MOSFET P-Channel, Metal Oxide
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Input Capacitance (Ciss) @ Vds: 350pF @ 25V
Gate Charge (Qg) @ Vgs: 27nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 6.8A
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Manufacturer: International Rectifier
Power - Max: 3.8W
Supplier Device Package: TO-262
Rds On (Max) @ Id, Vgs: 480 mOhm @ 4A, 10V


Features:

·Advanced Process Technology
·Surface Mount (IRF9520S)
·Low-profile through-hole (IRF9520L)
·175°C Operating Temperature
·Fast Switching
·P-Channel
·Fully Avalanche Rated


Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ -10V	-6.8	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ -10V	-4.8
IDM	Pulsed Drain Current	-27
PD @TA = 25°C	Power Dissipation	3.8
PD @TC = 25°C	Power Dissipation	48	W
	Linear Derating Factor	0.32	W/
VGS	Gate-to-Source Voltage	± 20	V
EAS	Single Pulse Avalanche Energy	140	mJ
IAR	Avalanche Current	-4.0	A
EAR	Repetitive Avalanche Energy	4.8	mJ
dv/dt	Peak Diode Recovery dv/dt	-5.0	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )

Description

Fifth Generation HEXFETs IRF9520NL from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2Pak IRF9520NL is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRF9520NL) is available for lowprofile applications.

Parameters:

Technical/Catalog Information	IRF9520NL
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	6.8A
Rds On (Max) @ Id, Vgs	480 mOhm @ 4A, 10V
Input Capacitance (Ciss) @ Vds	350pF @ 25V
Power - Max	3.8W
Packaging	Tube
Gate Charge (Qg) @ Vgs	27nC @ 10V
Package / Case	TO-262-3 (Straight Leads)
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRF9520NL IRF9520NL