IRF9510

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 4 A
Drain-Source Breakdown Voltage : - 100 V
Resistance Drain-Source RDS (on) : 1.2 Ohms


Features:

• 3.0A, 100V
• rDS(ON) = 1.200W
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance


Pinout




Specifications

	IRF9540, RF1S9540SM	UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . VDS	-100	V
Drain to Gate Voltage (RGS = 20k) (Note 1) . .. .. . . .VDGR	-100	V
Continuous Drain Current . . . . . . . . . . ID	-3.0	A
TC = 100 . . . . . . . . . . . . . . . . . . ID	-2.0	A
Pulsed Drain Current (Note 3) . . . . . . . . . IDM	-12	A
Gate to Source Voltage . . . . . . .. . . . . . VGS	±20	V
Maximum Power Dissipation (Figure 1) . . . . . . . . PD	20	W
Linear Derating Factor (Figure 1) . . . . . . . . . . .	0.16	W/
Single Pulse Avalanche Energy Rating (Note 4). . .. . EAS	190	mJ
Operating and Storage Temperature . . . . . . . . TJ, TSTG	-55 to 175
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . .TL	300
Package Body for 10s, See Techbrief 334 . . . . . . . Tpkg	260

Description

This P-Channel enhancement mode silicon gate power field effect transistor of the IRF9510 is an advanced power MOSFET designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Formerly developmental type IRF9510.