IRF9150

Features:

• -25A, -100V
• rDS(ON) = 0.150W
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance


Specifications

	IRF9150	UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . VDS	-100	V
Drain to Gate Voltage (RGS = 20kW) (Note 1) . . . . . .. . . .VDGR	-100	V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . ID	-25	A
TC = 100 . . . . . . . . . . . . . . . . . . .. . . . . . . ID	-18	A
Pulsed Drain Current (Note 3) . . . . . . . .. . . . . . . . IDM	-100	A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . VGS	±20	V
Maximum Power Dissipation (Figure 1) . . . . . . . . . . . . PD	150	W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . .	1.2	W/
Single Pulse Avalanche Energy Rating (Note 4). . . . . .. . EAS	1300	mJ
Avalanche Current (Repetitive or Nonrepetitive) . .. . . . . IAR	-25	A
Operating and Storage Temperature . . . . . . . .. . . . TJ, TSTG	-55 to 150
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . .TL	300

Description

This P-Channel enhancement mode silicon gate power field effect transistor IRF9150 is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

These types IRF9150 can be operated directly from integrated circuits.

Formerly developmental type IRF9150.