Features: ·Repetitive Avalanche Ratings·Dynamic dv/dt Rating·Hermetically Sealed·Simple Drive Requirements·Ease of ParallelingSpecifications Parameter Units ID @ VGS = 0V, TC = 25 Continuous Drain Current -18 A ID @ VGS = 0V, TC = 100 Continuous Drain Current -11 IDM Pulse...
IRF9140: Features: ·Repetitive Avalanche Ratings·Dynamic dv/dt Rating·Hermetically Sealed·Simple Drive Requirements·Ease of ParallelingSpecifications Parameter Units ID @ VGS = 0V, TC = 25 Cont...
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Parameter | Units | ||
ID @ VGS = 0V, TC = 25 | Continuous Drain Current | -18 | A |
ID @ VGS = 0V, TC = 100 | Continuous Drain Current | -11 | |
IDM | Pulsed Drain Current ➀ | -72 | |
PD @ TC = 25 | Max. Power Dissipation | 125 | W |
Linear Derating Factor | 1.0 | W/ | |
VGS | Gate-to-Source Voltage | ±20 | V |
EAS | Single Pulse Avalanche Energy ➁ | 500 | mJ |
IAR | Avalanche Current ➀ | -18 | A |
EAR | Repetitive Avalanche Energy ➀ | 12.5 | mJ |
dv/dt | Peak Diode Recovery dv/dt ➂ | -5.5 | V/ns |
TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 | |
Lead Temperature | 300 (0.063 in. (1.6mm) from case for 10s) | ||
Weight | 11.5 (typical) | g |
The HEXFETtechnology IRF9140 is the key to International Rectifier's advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest "State of the Art" design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability.
The HEXFET transistors IRF9140 also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of parelleling and temperature stability of the electrical parameters.
They are well suited for applications IRF9140 such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.