MOSFET
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 12 V | ||
Gate-Source Breakdown Voltage : | 12 V | Continuous Drain Current : | 10 A | ||
Resistance Drain-Source RDS (on) : | 15 mOhms | Configuration : | Dual | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOIC-8 | Packaging : | Tube |
Technical/Catalog Information | IRF7910PBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | 2 N-Channel (Dual) |
Drain to Source Voltage (Vdss) | 12V |
Current - Continuous Drain (Id) @ 25° C | 10A |
Rds On (Max) @ Id, Vgs | 15 mOhm @ 8A, 4.5V |
Input Capacitance (Ciss) @ Vds | 1730pF @ 6V |
Power - Max | 2W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 26nC @ 4.5V |
Package / Case | 8-SOIC (3.9mm Width) |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRF7910PBF IRF7910PBF |