MOSFET N-CH 40V 18A 8-SOIC
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Parameter | Max. | Units | |
VDS | Drain- Source Voltage | 40 | V |
VGS | Gate-to-Source Voltage | ± 20 | |
ID @ TA = 25 | Continuous Drain Current, VGS @ 10V | 18 | A |
ID @ TA = 70 | Continuous Drain Current, VGS @ 10V | 14 | |
IDM | Pulsed Drain Current | 140 | |
PD @ TA = 25 | Power Dissipation | 2.5 | W |
PD @ TA = 70 | Power Dissipation | 1.6 | |
Linear Derating Factor | 0.02 | W/ | |
TJ, TSTG | Operating Junction and Storage Temperature Range |
-55 to + 150 |
Technical/Catalog Information | IRF7842 |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25° C | 18A |
Rds On (Max) @ Id, Vgs | 5 mOhm @ 17A, 10V |
Input Capacitance (Ciss) @ Vds | 4500pF @ 20V |
Power - Max | 2.5W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 50nC @ 4.5V |
Package / Case | 8-SOIC (3.9mm Width) |
FET Feature | Logic Level Gate |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | IRF7842 IRF7842 |