IRF7834

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Power - Max: 2.5W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Series: HEXFET®
Current - Continuous Drain (Id) @ 25° C: 19A
Packaging: Tube
Gate Charge (Qg) @ Vgs: 44nC @ 4.5V
Supplier Device Package: 8-SO
Manufacturer: International Rectifier
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 19A, 10V
Input Capacitance (Ciss) @ Vds: 3710pF @ 15V


Features:

·Very Low RDS(on) at 4.5V VGS
·Ultra-Low Gate Impedance
·Fully Characterized Avalanche Voltage and Current
·20V VGS Max. Gate Rating


Application

·Synchronous MOSFET for Notebook Processor Power
·Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems


Pinout




Specifications

	Parameter	Max.	Units
VDS	Drain- Source Voltage	30	V
VGS	Gate-to-Source Voltage	± 20
ID @ TA = 25	Continuous Drain Current, VGS @ 10V	19	A
ID @ TA = 70	Continuous Drain Current, VGS @ 10V	16
IDM	Pulsed Drain Current	160
PD @ TA = 25	Power Dissipation	2.5	W
PD @ TA = 70	Power Dissipation	1.6
	Linear Derating Factor	0.02	W/
TJ, TSTG	Operating Junction and Storage Temperature Range	-55 to + 150